Read-only/read-write memory

Static information storage and retrieval – Systems using particular element – Semiconductive

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365102, 365149, G11C 700

Patent

active

043808034

ABSTRACT:
An improved read-only/read-write semiconductor memory of the type that includes a semiconductor substrate with dopant atoms of a first conductivity type, a pair of spaced-apart charge storage regions at the surface of the substrate, a bit line at the surface of the substrate spaced apart from the charge storage region, respective MOSFET transistor gate regions at the surface of the substrate between the bit line and the charge storage regions, and a conductor over the storage regions; the improvement comprising dopant atoms of a second conductivity type in one of the storage regions, and dopant atoms of the first conductivity type in the other of the storage regions having a greater doping concentration than is in the body of the substrate; and circuitry for applying a read-write mode voltage to the conductor to permit charge to be stored in both of the storage regions, and for applying a read-only mode voltage to the conductor to permit charge to be stored in the one storage region and simultaneously prevent charge from being stored in the other storage region by there producing a potential barrier.

REFERENCES:
patent: 3755793 (1973-08-01), Ho et al.
patent: 3983544 (1976-09-01), Dennison et al.
patent: 4230954 (1980-10-01), Heller

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Read-only/read-write memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Read-only/read-write memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Read-only/read-write memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-839486

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.