Read only memory using static induction transistor

Details Read only memory using static induction transistor Read only memory using static induction transistor

1980-11-25

1983-08-23

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365180, 357 22, G11C 1140

Patent

active

044007973

ABSTRACT:
A read only memory comprised of a semiconductor substrate and an epitaxial semiconductor layer formed on the substrate and having the same conductivity type as the substrate and a lower impurity density than the substrate. A plurality of word lines are formed in the surface of the epitaxial layer and comprise regions of semiconductor material having a conductivity type opposite that of the substrate. The word lines have openings therethrough which are filled with the epitaxial layer material. Regions of semiconductor material having the same conductivity type as the substrate are formed in selected portions of the epitaxial layer material filling the openings through the word lines. A plurality of bit lines overlie and intersect the word lines and contact the regions of semiconductor material formed in the selected portions of the epitaxial layer material filling the openings of the word lines. The substrate, one of the word lines, the epitaxial layer material within the opening extending through the word line and the region of semiconductor material in the epitaxial layer material within the opening respectively comprise a source, gate, channel and drain of a static induction transistor.

REFERENCES:
patent: 3986180 (1976-10-01), Cade
"High Speed and High Density Static Induction Transistor Memory", by Nishizawa et al., IEEE Journal of Solid-State Circuits, vol. SC-13, No. 5, Oct. 1978, pp. 622-634.

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