Read only memory device and manufacturing method

Details Read only memory device and manufacturing method Read only memory device and manufacturing method

1996-02-23

1998-02-24

Nelms, David C.

Static information storage and retrieval

Read only systems

Semiconductive

365 94, 257390, G11C 1700, H01L 2968

Patent

active

057216983

ABSTRACT:
A semiconductor memory device and a method for manufacturing the same are disclosed. The device includes a plurality of active regions repeatedly formed extending in parallel to each other, a device isolation region, a plurality of first gate electrodes repeatedly arranged being perpendicular to the active region and device isolation region, a source/drain region formed by being self-aligned ion-implanted into the first gate electrode, active region, and device isolation region, and a second gate electrode located between the first gate electrodes, extending in parallel to the first gate electrode, sharing the source/drain with the first gate electrode, and using the device isolation region as a channel. Thus, cell integration can be enhanced, and high speed operation and excellent yields can be easily ensured.

REFERENCES:
patent: 5280442 (1994-01-01), Hotta
patent: 5332917 (1994-07-01), Lee

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