Read enhancement for memory

Details Read enhancement for memory Read enhancement for memory

2011-05-17

2011-05-17

Elms, Richard (Department: 2824)

Static information storage and retrieval

Read/write circuit

Particular read circuit

C365S148000, C365S158000

Reexamination Certificate

active

07944760

ABSTRACT:
An electronic circuitry is provided for reading out a memory element (ME). The electronic circuitry comprises a first electronic path (IP) being coupled to the memory element (ME), a second electronic path (RP) having predetermined electrical properties, and a basic detection element (BDE) being coupled to the first and second electronic paths (IP, RP) such that the information contained in the memory element (ME) can be determined by the basic detection element (BDE) based on the relation of a digital signal being propagated over the first path (IP) to a digital signal being propagated over the second path (RP).

REFERENCES:
patent: 5848002 (1998-12-01), Inada et al.
patent: 5933366 (1999-08-01), Yoshikawa
patent: 6282145 (2001-08-01), Tran et al.
patent: 6577525 (2003-06-01), Baker
patent: 6597598 (2003-07-01), Tran et al.
patent: 6795359 (2004-09-01), Baker
patent: 6930942 (2005-08-01), Baker
patent: 7142464 (2006-11-01), Dadashev
patent: 2004/0008543 (2004-01-01), Kato
patent: 2006/0044907 (2006-03-01), Forbes et al.
patent: 2006/0268644 (2006-11-01), Boas et al.
patent: 1467377 (2004-10-01), None
patent: 1699054 (2006-09-01), None
patent: 2007/005634 (2007-01-01), None

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