Read disturb reduction circuit for spin transfer torque...

Details Read disturb reduction circuit for spin transfer torque... Read disturb reduction circuit for spin transfer torque...

2011-08-23

2011-08-23

Nguyen, Tuan T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S148000, C365S203000, C365S210100

Reexamination Certificate

active

08004880

ABSTRACT:
Systems, circuits and methods for reducing read disturbances in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A resistive element can be used during the read operation to control the read current and control read disturbances. An isolation element can be used to isolate the resistive element from the circuit during write operations.

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Translation of Office Action in Korean application 10-2009-7020232 corresponding to U.S. Appl. No. 11/771,065, citing KR0518692 dated Feb. 12, 2011.

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