Read circuit of semiconductor and read method using a...

Details Read circuit of semiconductor and read method using a... Read circuit of semiconductor and read method using a...

2006-09-05

2006-09-05

Lam, David (Department: 2827)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S203000, C365S189090

Reexamination Certificate

active

07102945

ABSTRACT:
A read circuit of a semiconductor memory according to the present invention is based on a self-reference sensing technique by which data stored in a memory cell is determined by first and second signals read out from a memory cell through first and second read operations. This read circuit includes a sense amplifier which determines the data stored in the memory cell based on a potential of an input node, a transfer transistor which is connected between the memory cell and the input node, a precharge circuit which sets the input node to a precharge potential, and a VBIAS generator which turns the transfer transistor cutoff based on the first signal.

REFERENCES:
patent: 6075734 (2000-06-01), Jang
patent: 6545906 (2003-04-01), Savtchenko et al.
Noboru Sakimura, et al., “A512Kb Cross-Point Cell MRAM”, 2003 IEEE International Solid-State Circuits Conference, Paper 16.1, 2003.
Gitae Jeong, et al., “A 0.24μM 2.0V 1T1MTJ 16kb NV Magnetoresistance RAM with Self Reference Sensing”, 2003 IEEE International Solid-State Circuits Conference, Paper 16.2, 2003.

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