Reactor surface passivation through chemical deactivation

Coating processes – Interior of hollow article coating

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C427S237000, C427S248100, C427S255230, C427S255260, C427S255270

Reexamination Certificate

active

07118779

ABSTRACT:
Protective layers are formed on a surface of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor. Parts defining a reaction space for an ALD or CVD reactor can be treated, in situ or ex situ, with chemicals that deactivate reactive sites on the reaction space surface(s). A pre-treatment step can maximize the available reactive sites prior to the treatment step. With reactive sites deactivated by adsorbed treatment reactant, during subsequent processing the reactant gases have reduced reactivity or deposition upon these treated surfaces. Accordingly, purge steps can be greatly shortened and a greater number of runs can be conducted between cleaning steps to remove built-up deposition on the reactor walls.

REFERENCES:
patent: 4539061 (1985-09-01), Sagiv
patent: 5591494 (1997-01-01), Sato et al.
patent: 6071573 (2000-06-01), Koemtzopoulos et al.
patent: 6162499 (2000-12-01), Sandhu et al.
patent: 6391785 (2002-05-01), Satta et al.
patent: 6416577 (2002-07-01), Suntoloa et al.
patent: 6468903 (2002-10-01), Bolscher et al.
patent: 6664192 (2003-12-01), Satta et al.
patent: 6720259 (2004-04-01), Londergan et al.
patent: 6890596 (2005-05-01), Sarigiannis et al.
patent: 2002/0022265 (2002-02-01), Bailey et al.
patent: 2004/0134427 (2004-07-01), Derderian et al.
patent: 0 844 028 (1998-05-01), None
patent: WO 01/27346 (2001-04-01), None
patent: WO 01/40541 (2001-06-01), None
patent: WO 02/088421 (2002-11-01), None
patent: WO 2004/063421 (2004-07-01), None
A. Schmohl, A. Khan and P. Hess,Functionalization of oxidized silicon surfaces with methyl groups and their characterization, Superlattices and Microstructures, Sep. 15, 2004, Superlattices and Microstructures 36 (2004), pp. 113-121, Elsevier Ltd.
Chen et al., “Surface Modification for Area-selective Atomic Layer Deposition,”NSF / SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing, pp. 1-33 (2003).
Mui et al., “Surface Modification for Selective Atomic Layer Deposition of High-κ Dielectric Materials,”NSF / SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing, pp. 1-21 (2002).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Reactor surface passivation through chemical deactivation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reactor surface passivation through chemical deactivation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reactor surface passivation through chemical deactivation will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3685008

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.