Reactor for depositing thin film on wafer

Details Reactor for depositing thin film on wafer Reactor for depositing thin film on wafer

2005-02-08

2005-02-08

Hassanzadeh, Parviz (Department: 1763)

Coating apparatus

Gas or vapor deposition

C156S345330, C156S345340

Reexamination Certificate

active

06852168

ABSTRACT:
A thin film deposition reactor including a reactor block on which a wafer is placed, a shower head plate for uniformly maintaining a predetermined pressure by covering the reactor block, a wafer block installed in the reactor block, on which the wafer is to be seated; an exhausting portion connected to the reactor block for exhausting a gas from the reactor block; a first connection line in communication with the shower head plate, through which a first reaction gas and/or inert gas flow, a second connection line in communication with the shower head plate, through which a second reaction gas and/or inert gas flow, and a diffusion plate mounted on a lower surface of the shower head plate. The diffusion plate has a plurality of spray holes which are in communication with the first connection line and face the upper surface of the wafer to spray the first reaction gas and/or inert gas onto the wafer, and a plurality of nozzles which are in communication with the second connection line and extend toward the inner side surface of the reactor block to spray the second reaction gas and/or inert gas toward edges of the wafer.

REFERENCES:
patent: 5000113 (1991-03-01), Wang et al.
patent: 5010842 (1991-04-01), Oda et al.
patent: 5076207 (1991-12-01), Washitani et al.
patent: 5134965 (1992-08-01), Tokuda et al.
patent: 5332442 (1994-07-01), Kubodera et al.
patent: 5338363 (1994-08-01), Kawata et al.
patent: 5387557 (1995-02-01), Takagi
patent: 5425812 (1995-06-01), Tsutahara et al.
patent: 5439524 (1995-08-01), Cain et al.
patent: 5525160 (1996-06-01), Tanaka et al.
patent: 5595606 (1997-01-01), Fujikawa et al.
patent: 5624498 (1997-04-01), Lee et al.
patent: 5779849 (1998-07-01), Blalock
patent: 5851294 (1998-12-01), Young et al.
patent: 5976261 (1999-11-01), Moslehi et al.
patent: 6013155 (2000-01-01), McMillin et al.
patent: 6024799 (2000-02-01), Chen et al.
patent: 6179920 (2001-01-01), Tarutani et al.
patent: 6217658 (2001-04-01), Orczyk et al.
patent: 6387182 (2002-05-01), Horie et al.
patent: 6436193 (2002-08-01), Kasai et al.
patent: 0 540 082 (1993-05-01), None
patent: 0 821 084 (1998-01-01), None
patent: 0 836 227 (1998-04-01), None
patent: 0 853 138 (1998-07-01), None
patent: 0959150 (1999-11-01), None
patent: 0 959 150 (1999-11-01), None
patent: 31272938 (1986-02-01), None
patent: 02015171 (1990-01-01), None
patent: 04080366 (1992-03-01), None
patent: 09316644 (1997-12-01), None

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