Reactive sputtering system for depositing titanium nitride witho

Details Reactive sputtering system for depositing titanium nitride witho Reactive sputtering system for depositing titanium nitride witho

1995-12-28

1997-07-01

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429811, 20429813, 20429819, C23C 1434

Patent

active

056434227

ABSTRACT:
A titanium nitride layer is deposited on a semiconductor substrate through a magnetron sputtering using a titanium target, and the sputtered surface is mainly formed by (001) crystal surfaces, at least 90 percent of which have respective <001> directions falling within 30 degrees with respect to a normal line to the a major surface of the semiconductor substrate, thereby preventing the sputtered surface from nitriding.

REFERENCES:
patent: 4428812 (1984-01-01), Sproul
patent: 4824544 (1989-04-01), Mikalesen et al.
patent: 4895765 (1990-01-01), Sue et al.
patent: 5155063 (1992-10-01), Ito
patent: 5242860 (1993-09-01), Nulman et al.
patent: 5382339 (1995-01-01), Aranovich
patent: 5419029 (1995-05-01), Raaijmakers
patent: 5512155 (1996-04-01), Fukasawa
patent: 5529670 (1996-06-01), Ryan et al.
"Reactively Sputtered Coherent TiN Process For Sub-0.5um Technology"; Dixit et al; Jun. 8-9, 1993; VMIC Conference; pp. 433-435.
"Single Chamber Implementation Of A Coherent Ti/TiN Process For Sub-Half Micron Technologies"; Ramaswami et al; Jun. 8-9, 1993; VMIC Conference; pp. 439-441.
"Development Of A Coherent Ti/TiN Process For Sub-Half Micron Technologies"; Ramaswami et al; pp. 215-221; Conference Proceedings ULSI-IX 1994.
"Manufacturability Aspects Of A Single Chamber Coherent Ti/TiN Process"; Ramaswami et al; Conference Proceedings ULSI-IX 1994; pp. 555-559.

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