Reactive sputtering method

Details Reactive sputtering method Reactive sputtering method

2008-12-11

2011-12-06

Huff, Mark F (Department: 1721)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192130, C204S192140, C204S192150

Reexamination Certificate

active

08070917

ABSTRACT:
A reactive sputtering method for application of a bias voltage to a supporting substrate in formation of a film of a metal compound on the supporting substrate according to a bias sputtering method; wherein a supporting substrate conveyor unit and a cathode that includes a target facing the supporting substrate conveyor unit are provided; the supporting substrate is conveyed between the supporting substrate conveyor unit and the target for formation of a film of a metal compound on the supporting substrate; magnets are provided adjacent to the supporting substrate conveyor unit on a side thereof opposite to that of the supporting substrate, such that a magnetic field is closed and a continuing tunnel part of parallel or nearly parallel arched magnetic force lines forms an oval or a polygon on the supporting substrate, the magnets each having a first magnetic pole of an S pole or an N pole and a second magnetic pole opposite to the first magnetic pole, the second magnetic pole surrounding the first magnetic pole; and in film formation on the supporting substrate, the magnets are rotated inside a drum in an opposite direction to that in which the supporting substrate is conveyed outside of the drum, so as to secure uniform plasma application along the supporting substrate.

REFERENCES:
patent: 3905887 (1975-09-01), Kuehnle
patent: 6911779 (2005-06-01), Madocks
patent: 2009/0233101 (2009-09-01), Tsukamoto

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