Reactive sputter faceting of silicon dioxide to enhance gap fill

Details Reactive sputter faceting of silicon dioxide to enhance gap fill Reactive sputter faceting of silicon dioxide to enhance gap fill

1998-01-14

2000-03-21

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419235, 20419237, 438697, 438699, C23C 1434, H01L 21465

Patent

active

060398515

ABSTRACT:
An embodiment of the present invention teaches a semiconductor device fabrication process for reducing bread-loafing of an insulative layer at the gaps between a plurality of patterned conductive lines, by sputter faceting an existing SiO.sub.2 layer overlying the patterned conductive lines by flowing in argon gas at a rate of approximately 50 sccm, with a reactive CF.sub.4 gas having a flow rate range of approximately 1-4 sccm, into a chamber having a chamber pressure set at approximately 30 mTorr that is equipped with a magnetic field set at approximately 60 Gauss.

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