Reactive sputter etching of polysilicon utilizing a chlorine etc

Details Reactive sputter etching of polysilicon utilizing a chlorine etc Reactive sputter etching of polysilicon utilizing a chlorine etc

1981-09-08

1983-05-17

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 156662, 204192E, H01L 21308

Patent

active

043838855

ABSTRACT:
In a chlorine plasma, reactive sputter etching of monocrystalline silicon, undoped polycrystalline silicon or doped polycrystalline silicon is achieved. The etching processes are substantially free of any loading effects and are characterized by high resolution, excellent uniformity and high selectivity with respect to, for example, silicon dioxide. For silicon and undoped polysilicon, the edge profile of the etched material is anisotropic. For doped polysilicon, the edge profile can be controlled to occur anywhere in the range from completely isotropic to completely anisotropic.

REFERENCES:
patent: 3971684 (1976-02-01), Muto
patent: 4104086 (1978-08-01), Bondur et al.
patent: 4214946 (1980-07-01), Forget et al.
patent: 4268374 (1981-05-01), Lepselter
Eames et al., "Method for . . . Etching", IBM Technical Disclosure Bull., vol. 22, No. 7 (12/79), p. 2739.
Vossen, "Glow Discharge . . . Deposition", J. Electrochemical Society, vol. 126, No. 2, (2/79), pp. 319-320.

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