Reactive sputter etching of metal silicide structures

Details Reactive sputter etching of metal silicide structures Reactive sputter etching of metal silicide structures

1985-02-15

1986-08-26

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156655, 156656, 1566591, 156657, 204192E, 252 791, C23F 102, B44C 122, C03C 1500, C03C 2506

Patent

active

046081186

ABSTRACT:
Polycide structures are etched with silicon tetrachloride. The etch is preferably carried out at a pressure of about 20 to 60 mtorr and overetching to remove stringers is then carried out at an increased pressure, i.e. at least about 100 mtorr. There is obtained an anisotropic etch with substantially no stringers or linewidth loss. When selectivity of etch vis-a-vis an underlying layer of gate oxide must be enhanced, from about 60 to 90 percent by volume of the silicon tetrachloride is replaced with chlorine just prior to completion of the etch.

REFERENCES:
patent: 4450042 (1984-05-01), Purdes
patent: 4479850 (1984-10-01), Beinvogl et al.
patent: 4544444 (1985-10-01), Chang
Herb et al., Abstract No. 291, Extended Abstracts, Electrochemical Society, vol. 81-2, pp. 710 and 711 (1981).
Beinvogl et al., Solid State Tech., Apr., 1983, pp. 125-129.
Clark et al., Solid State Tech., Apr., 1984, pp. 235-242.
Light et al., J. Electrochem. Soc. vol. 131, No. 2, pp. 459-461, 1984.
Park et al., J. Electrochem. Soc. vol. 131, No. 1, pp. 214 and 215, 1984.
Heimann et al., J. Electrochem. Soc. vol. 131, No. 4, pp. 881-885, 1984.

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