Reactive ion etching process for metals

Details Reactive ion etching process for metals Reactive ion etching process for metals

1979-04-02

1980-05-20

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156652, 156656, 156657, 156664, 156655, 156668, 204192E, 252 791, 1566591, H01L 2144, H01L 21465

Patent

active

042038006

ABSTRACT:
Metal layers, for example; chromium and titanium-tungsten, used in conductive metallurgies as adhesion or barrier layers for integrated circuit devices which are formed in silicon semiconductor substrates, are selectively etched without significant attack on either the silicon substrate or aluminum conductor layers. The metal layers are exposed to a glow discharge formed by imposing an RF voltage across two spaced electrodes in an ambient atmosphere comprising a gaseous mixture of from about 5 to about 20 percent by volume of a polychlorinated organic compound containing one to two carbon atoms, for example, CCl.sub.4 or C.sub.2 HCl.sub.3 and about 80 to about 95 percent by volume of oxygen at a pressure in the range of about 5 to 50 milli-torr.

REFERENCES:
patent: 3615956 (1971-10-01), Irving et al.
patent: 3856648 (1974-12-01), Fuller et al.
patent: 3951709 (1976-04-01), Jacob
patent: 3971684 (1976-07-01), Muto
patent: 3994793 (1976-11-01), Haruilchuck et al.
patent: 4026742 (1977-05-01), Fujino
patent: 4030967 (1977-06-01), Ingrey et al.
Metzger et al., "Etching . . . Metallurgy", IBM Technical Disclosure Bulletin, vol. 19, No. 9, (Feb. 1977), p. 3366.

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