Reactive ion etching or indium tin oxide

Details Reactive ion etching or indium tin oxide Reactive ion etching or indium tin oxide

1993-01-25

1994-02-15

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 20419235, B01J 1500

Patent

active

052863379

ABSTRACT:
Indium tin oxide films deposited on substrates are subjected to reactive ion etching in a plasma containing dissociated hydrogen bromide or a mixture of dissociated hydrogen bromide and dissociated boron tinchloride.

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patent: 5171401 (1992-12-01), Roselle
Mohri et al., Plasma Etching of ITO Thin Films Using a CH.sub.4 /H.sub.2 Gas Mixture, Japanese Journal of Applied Physics, vol. 29, No. 10, Oct. 1990, pp. L1932-L1935.
Kuo et al., Reactive Ion Etching of Indium Tin Oxide with Flourochlorocarbon Gases, Proceedings Electrochemical Society 1990, pp. 765-772.
Calahorra et al., Reactive Ion Etching of Indium-Tin-Oxide Films, J. Electchem Soc. vol. 136, No. 6, Jun. 1989, pp. 1839-1840.

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