Reactive ion etching of tin oxide films using silicon tetrachlor

Details Reactive ion etching of tin oxide films using silicon tetrachlor Reactive ion etching of tin oxide films using silicon tetrachlor

1984-08-15

1985-10-01

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 1566591, 156667, 204192E, 252 791, B44C 122, C03C 1500, C03C 2506

Patent

active

045444447

ABSTRACT:
High resolution patterns can be etched in tin oxide films in one step using reactive ion etching when the reactant gas consists essentially of silicon tetrachloride (SiCl.sub.4).

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