Reactive ion etching of tin oxide films using neutral reactant g

Details Reactive ion etching of tin oxide films using neutral reactant g Reactive ion etching of tin oxide films using neutral reactant g

1984-08-13

1988-10-18

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156655, 1566591, 156667, 20419235, 252 791, B44C 122, C03C 1500, C03C 2506, C23F 102

Patent

active

047785624

ABSTRACT:
High resolution patterns can be etched in tin oxide films in one step using reactive ion etching when the reactant gas consists substantially of nitrogen and/or argon and from small but effective amounts of hydrogen up to about 10 percent by volume hydrogen.

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