Reactive ion etching of tantalum and silicon

Details Reactive ion etching of tantalum and silicon Reactive ion etching of tantalum and silicon

1982-12-13

1984-09-18

Massie, Jerome

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29591, 156656, 156657, 156662, 204192E, 357 67, H01L 21308

Patent

active

044722370

ABSTRACT:
A method for fabricating a device which includes a tantalum silicide structure, and which is essentially free of conductive etch residues, is disclosed. The method includes the steps of depositing tantalum and silicon onto a substrate, patterning the tantalum and silicon, and then sintering the patterned tantalum and silicon to form a patterned layer of tantalum silicide.

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