Reactive ion etching of silicon with hydrogen bromide

Details Reactive ion etching of silicon with hydrogen bromide Reactive ion etching of silicon with hydrogen bromide

1988-07-11

1991-04-16

Simmons, David A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156662, H01L 21306, B44C 122

Patent

active

050079824

ABSTRACT:
A plasma etching process using HBr is set forth in which etching of silicon and polysilicon in IC manufacture is significantly improved by the high etching selectivity for either silicon and polysilicon to both oxides and photoresist materials.

REFERENCES:
patent: 4432132 (1984-02-01), Kinsbron et al.
patent: 4490209 (1984-12-01), Hartman
patent: 4778563 (1988-10-01), Stone
patent: 4784720 (1988-11-01), Douglas

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