Reactive ion etching of molybdenum silicide and N+ polysilicon

Details Reactive ion etching of molybdenum silicide and N+ polysilicon Reactive ion etching of molybdenum silicide and N+ polysilicon

1983-01-06

1984-04-24

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156652, 156657, 1566591, 204192E, 252 791, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044446179

ABSTRACT:
An anisotropic etching processing for fabricating a solid state device which consists of the steps of providing a layer of silicon on the substrate and depositing a layer of molysilicide on the silicon layer. The molysilicide layer is then masked to define a pattern thereon. The unmasked portions of the molysilicide layer is then etched using a plasma etch gas mixture consisting essentially of CF.sub.4, C.sub.2 F.sub.6, O.sub.2 in the approximate ratio 50:5:2 in percent by volume. Etching through polysilicon is performed anisotropically using a plasma etch gas mixture consisting essentially of CCl.sub.2 F.sub.2 and C.sub.2 F.sub.6 in approximately the ratio 10:1 in percent by volume.

REFERENCES:
patent: 3971684 (1976-07-01), Muto
patent: 4162185 (1979-07-01), Coburn et al.
patent: 4208241 (1980-06-01), Harshbarger et al.
IBM Technical Disclosure Bulletin, vol. 18, No. 6, Nov. 1975, RF Reactive Ion Etching of Polysilicon with Fluorocarbon Gas by J. A. Bonjur and T. A. Hansen, p. 1897.
R. H. Dennard, R. H. Gaensslen, H. N. Yu, V. L. Rideout, E. Bassons, and A. B. LeBlanc, "Design of Ion-Implanted MOSFET's with Very Small Physical Dimensions", IEEE J. Solid-State Circuits, vol. SC-9, 256-268, 1974.
R. H. Bruce, "Anisotropy Control in Dry Etching", Oct. 1981.
"Plasma Etching of Aluminum: Review of Process and Equipment Technology"; Aaron Weiss, 10/82 Semiconductor International, pp. 72 and 74.

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