Reactive ion etching of III-V semiconductor compounds

Details Reactive ion etching of III-V semiconductor compounds Reactive ion etching of III-V semiconductor compounds

1980-01-29

1981-08-25

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156662, 204192E, 252 791, H01L 21306

Patent

active

042857635

ABSTRACT:
The successful application of the reactive ion etching technique to the III-V compounds requires the use of the appropriate etch gas. We have found that a gas mixture of chlorine (Cl.sub.2) and Oxygen (O.sub.2) will cleanly and effectively etch heated substrates of GaAs and InP and their ternary and quaternary alloys. The etch rate is increased by heating the substrate to a temperature of 100.degree. to 400.degree. C.

REFERENCES:
patent: 3923568 (1975-12-01), Bersin
patent: 3923569 (1975-12-01), Ono et al.
patent: 3951709 (1976-04-01), Jacob
patent: 3971684 (1976-07-01), Muto
Todokoro et al. "Selective Etching of GaAs Using a Plasma Process", Matsushita Elec. Co. No. 4A-E-6, pp. 1-3.
Skinner, "New Method . . . Inp Surfaces . . . Formation", Jay Electronic Material, vol. 9, No. 1 (1980), pp. 68-78.
Tsang et al., "Optical . . . Etching", Applied Optics, vol. 14, No. 5, (5/75) pp. 1202-1206.
Weaman et al., "Profile Control . . . Etching", J. of Vac. Science Technology, vol. 15, No. 2 (4/78) pp. 319-326.
Bersin, "A Survey . . . Processes", Solid State Technology (5/76), pp. 31-36.
Flanders et al., "Alignment . . . Grantings" Appl. Physics Letters, vol. 32, No. 10, (5/78), p. 597.
Comerford et al., "Selectively . . . GaAs", Appl. Physics Letters, vol. 25, No. 4, (8/74), pp. 208-210.
Chang, Presentation to American Vacuum Society, Oct. 5, 1979, VU-Graph.

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