Reactive ion etching of III-V compounds including InP, GaAs-InP

Details Reactive ion etching of III-V compounds including InP, GaAs-InP Reactive ion etching of III-V compounds including InP, GaAs-InP

1980-12-04

1982-04-27

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156655, 156662, 204192E, 252 791, H01L 21306

Patent

active

043269117

ABSTRACT:
The successful application of the reactive ion etching technique to the III-V compounds requires the use of the appropriate etch gas. We have found that a gas mixture comprised of either CCl.sub.2 F.sub.2 alone or in combination with one or more of the gasses: argon (Ar), oxygen (O.sub.2) and nitrogen (N.sub.2) will cleanly and effectively etch GaAs and InP and their ternary and quaternary alloys as well as AlGaAs and the oxides of GaAs. The effective ranges of relative flow rates of Ar, CCl.sub.2 F.sub.2 and oxygen are: Ar (0-83%), CCl.sub.2 F.sub.2 (8-100%), O.sub.2 (0-50%), and N.sub.2 (0-60%).

REFERENCES:
patent: 3971684 (1976-07-01), Muto
patent: 4028155 (1977-06-01), Jacob
Howard et al., "Reactive Ion Etching . . . " Conference: Integrated and Guided-Wave Optics Technical Digest, Incline Village, NV, (28-30 Jan. 1980).
Burstell et al., "Preferential Etch . . . GaAlAs", IBM Technical Disclosure Bulletin, vol. 20, No. 6 (11/77), p. 2451.
Iga et al., "GaInAs/P . . . Etching", Topical Meeting on Integrated and Guided Wave Optics (IEEE, New York) presented Jan. 28-30, 1980, Incline Village, Nevada.
Smolinsky et al., "Plasma Etching of III-V . . . Oxides", presented by R. Chang, Amer. Vac. Soc. Meeting, New York, N.Y., Oct. 29, 1979.
Somekh et al., "Dry Processing . . . Optics", Applied Optics, vol. 16, No. 1 (1-77), pp. 126-136.
Todokoro et al., "Selective . . . Plasma Process", Matsushita Elec. Co., Memorandum UA-E-6 (1979), pp. 1-3.

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