Reactive ion etching of alumina/TiC substrates

Details Reactive ion etching of alumina/TiC substrates Reactive ion etching of alumina/TiC substrates

1997-06-05

1999-12-14

Breneman, Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 74, 216 76, 216 77, C03C 1502

Patent

active

060012684

ABSTRACT:
The invention is a method of patterning the air bearing surface of a ceramic slider preferably including alumina and titanium carbide. The method includes the steps of forming an etch pattern by depositing and developing a photoresist on the ceramic slider, and reactive ion etching the slider air bearing surface using an etchant gas of argon, sulfur hexafluoride, and methyltrifluoride flowing at a rate which provides a smooth patterned surface on the slider air bearing surface.

REFERENCES:
patent: 4933318 (1990-06-01), Heijman
patent: 5047115 (1991-09-01), Charlet et al.
patent: 5183531 (1993-02-01), Terakado
patent: 5217567 (1993-06-01), Cote et al.
patent: 5234537 (1993-08-01), Nagano et al.
patent: 5286344 (1994-02-01), Blalock et al.
patent: 5404256 (1995-04-01), White
patent: 5461010 (1995-10-01), Chen et al.
patent: 5476182 (1995-12-01), Ishizuka et al.
patent: 5622596 (1997-04-01), Armacost et al.
"Process to Reactively Etch A1.sub.2 O.sub.3 for Thin Film Head Fabrication", Disclosed anonymously 32065.
Y. H. Lee et al., "Chemical Sputtering of Al.sub.2 O.sub.3 by Fluorine-Containing Plasmas Excited by Electron Cyclotron Resonance", IBM Research Division, Research Report 90A002982, 20 pgs., Mar. 30, 1990.

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