Reactive ion etching method

Details Reactive ion etching method Reactive ion etching method

1984-05-09

1986-01-28

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156657, 1566591, 156662, 156345, 204192E, 204298, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

045669414

ABSTRACT:
A reactive ion etching method utilizing high frequency voltage wherein cathode drop voltage developed in the vicinity of an electrode disposed for impressing a high frequency power is gradually reduced immediately before stopping the impression of high frequency power at the end of ion etching process, thereby reducing the voltage impressed on an insulation layer within a semiconductor wafer below the breakdown voltage of the insulation layer.

REFERENCES:
patent: 4207137 (1980-01-01), Tretola
patent: 4349409 (1982-09-01), Shibayama et al.

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