Reactive ion etching

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156646, 156345, 204192E, H01L 21306, B44C 122, C23F 100

Patent

active

042832497

ABSTRACT:
A silicon oxide, nitride, and/or oxynitride surface on a substrate is selectively etched at a rate greater than that of the substrate by a reactive ion etching employing a gaseous mixture containing a fluorocarbon and a second gas capable of supplying hydrogen.

REFERENCES:
patent: 3654108 (1972-04-01), Smith
patent: 3940506 (1976-02-01), Heinecke
patent: 3971684 (1976-07-01), Muto
patent: 4028155 (1977-06-01), Jacob

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