Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1990-04-02
1992-04-21
Niebling, John
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
156643, 156656, 156665, 20419232, C23F 100
Patent
active
051064715
ABSTRACT:
A dry etch process allows fabrication of very small SAW electrodes (less than 1 micron wide) on LiNbO.sub.3 (lithium niobate) or quartz substrates. In the process, analuminum (Al) layer is disposed on the substrate, and a photoresist layer is applied and exposed in the appropriate pattern. The wafer is then placed in an RIE where the Al is dry etched using a plasma containing chlorine and fluorine. The photoresist is then removed by an oxygen plasma. The oxygen also operates to replace the chlorine ions. By using this process, very precisely shaped electrodes can be formed.
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Galvin Jeffrey L.
Robinson Frederick J.
Yee David M.
Handy Robert M.
Leader William T.
Motorola Inc.
Niebling John
Powell Jordan C.
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