Reactive barrier/seed preclean process for damascene process

Details Reactive barrier/seed preclean process for damascene process Reactive barrier/seed preclean process for damascene process

2007-09-25

2007-09-25

Mai, Anh Duy (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S687000, C257SE21577

Reexamination Certificate

active

10356960

ABSTRACT:
A method for making a multilayer interconnect electronic component structure, and, in particular, an integrated circuit semiconductor device made using a copper damascene method is provided. The process of the invention uses a method for pre-cleaning exposed copper surfaces in the structure. The method employs a cleaning composition containing a nitrogen containing material and an oxygen containing material and also optionally a hydrogen containing material to remove the copper oxide film on copper surfaces in the structure. The preferred nitrogen material is nitrogen gas and the preferred oxygen material is oxygen gas. The gas mixture is preferably energized to form a plasma which is used to contact and remove the copper oxide and clean the structure. A two-step process may be used employing a nitrogen/oxygen mixture and then a hydrogen containing gas mixture such as Ar/H2. It has also been found that the advantages of the method include not only removal of residue and copper oxide from the structure without significant dielectric shift of the dielectric, but also provides enhanced metal adhesion to the treated dielectric as well as surface passivation of the dielectric.

REFERENCES:
patent: 5434451 (1995-07-01), Dalal et al.
patent: 6130161 (2000-10-01), Ashley et al.
patent: 6207222 (2001-03-01), Chen et al.
patent: 6352938 (2002-03-01), Chen et al.
patent: 6355568 (2002-03-01), Wang et al.
patent: 6355571 (2002-03-01), Huang et al.

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