Reactant gas flow structure for a low pressure chemical vapor de

Details Reactant gas flow structure for a low pressure chemical vapor de Reactant gas flow structure for a low pressure chemical vapor de

1978-10-30

1980-09-02

Hoffman, James R.

Coating apparatus

Gas or vapor deposition

118728, C23C 1100, C23C 1308

Patent

active

042201160

ABSTRACT:
A structure for a low-pressure chemical vapor deposition system which achieves greater uniformity of deposition. The structure includes injection means designed to provide more uniform distribution of the reactant gases injected into the system, as well as means to control the gas flow across the surfaces of the respective wafers and then the exhaust of those gases from the system. To this end, plenums which run the length of the deposition chamber beneath or to the side of the wafers are provided with openings arranged in a non-uniform manner to achieve this uniform injection. Furthermore, the wafer support or boat is provided with means to disperse concentrations of the reactant gases so as to provide more uniformity of the gas flow across the surfaces of the wafers.

REFERENCES:
patent: 3753809 (1973-08-01), Gaier et al.
patent: 3922467 (1975-11-01), Pinchon
patent: 4018183 (1977-04-01), Meuleman
patent: 4062318 (1977-12-01), Ban et al.

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