Re-writable memory with non-linear memory element

Details Re-writable memory with non-linear memory element Re-writable memory with non-linear memory element

2005-03-22

2005-03-22

Nguyen, Tan T. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Resistive

Reexamination Certificate

active

06870755

ABSTRACT:
A re-writable memory that uses resistive memory cell elements with non-linear IV characteristics is disclosed. Non-linearity is important in certain memory arrays to prevent unselected cells from being disturbed and to reduce the required current. Non-linearity refers to the ability of the element to block the majority of current up to a certain level, but then, once that level is reached, the element allows the majority of the current over and above that level to flow.

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