Rare earth metal oxide memory element based on charge...

Details Rare earth metal oxide memory element based on charge... Rare earth metal oxide memory element based on charge...

2005-05-17

2005-05-17

Nguyen, Van Thu (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S314000

Reexamination Certificate

active

06894338

ABSTRACT:
A data storage element (and method of forming the same) includes a substrate comprising a semiconductor material, a metal oxide layer including an electrically insulating rare earth metal oxide disposed upon a surface of the substrate, a conductive material disposed upon the metal oxide layer, a first electrode electrically connected to the conductive material, and a second electrode connected to the substrate.

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patent: 20020137317 (2002-09-01), Kaushik et al.
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patent: 20020164850 (2002-11-01), Gnadinger et al.
Chon et al. “Fatigue free samarium-modified bismuth titanate film capacitors having large spontaneous polarizations”, Nov. Applied Physics Letters , vol. 79 No. 10 pp. 3137-3139.*
U.S. Appl. No. 09/913,723 filed Aug. 17, 2001 entitled “Microelectric Device for Storing Information and Method Thereof.”

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