Rare earth manganate films made by metalorganic decomposition or

Details Rare earth manganate films made by metalorganic decomposition or Rare earth manganate films made by metalorganic decomposition or

1995-07-12

1997-04-29

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

427124, 4274191, H01L 2978

Patent

active

056255870

ABSTRACT:
A ferroelectric memory device having a perovskite thin film of a rare earth manganate and processes for manufacturing the same. The perovskite thin film layer has properties consistent with high quality nonvolatile memory devices. The perovskite thin film layer can be applied by a MOCVD process, by a MOD process, or a liquid source delivery process, all of which are described.

REFERENCES:
patent: 5418389 (1995-05-01), Watanabe
patent: 5442585 (1995-08-01), Eguchi et al.
patent: 5481490 (1996-01-01), Watanabe et al.

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