Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1991-05-02
1992-07-07
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156640, 156655, 156662, 156630, 156345, 252 795, H01L 21306, B44C 122
Patent
active
051279843
ABSTRACT:
A method for thinning a Gallium Arsenide (GaAs) layer on the backside of a wafer substrate is provided. The method involves spraying an etchant solution including NH.sub.4 OH and H.sub.2 O.sub.2, preferably in a 1:4 ratio, onto the GaAs layer as the wafer is rotated at approximately 2000 rpm. The etchant is sprayed through a plurality of spray nozzles. The process is capable of thinning a GaAs layer by about 500 .mu.m in approximately 14 to 18 minutes, depending on the etchant temperature and composition.
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James M. O'Connor et al., Rapid Controlled Thinning of Gallium Arsenide, J. Electrochem. Soc., Solid-State Science and Technology, Jan. 1988, pp. 190-193.
Applied Process Technology, Inc., Model 9165 Gallium Arsenic Wafer Etcher.
Day Ding Y. S.
Hua Chang-Hwang
Avantek, Inc.
Powell William A.
Shaw, Jr. Philip M.
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