Rapid thermal treatment to eliminate metal void formation in VLS

Details Rapid thermal treatment to eliminate metal void formation in VLS Rapid thermal treatment to eliminate metal void formation in VLS

1991-12-09

1993-09-28

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156657, 1566591, 156664, 156665, 156666, 156668, H01L 2100

Patent

active

052483843

ABSTRACT:
The method of forming a void-free surface on aluminum-copper metallurgy after stripping of resist is described. There is provided an aluminum-copper metallurgy on a suitable substrate, such as a semiconductor integrated circuit wafer during manufacture. A resist layer is formed over surface. The resist layer is exposing, developing and the developed resist is used as an etch mask to etch a layer, such as an insulating layer on the metallurgy which results in exposing the aluminum-copper metallurgy surface. The resist etch mask is removed by plasma oxygen ashing in presence of the exposed aluminum-copper surface. Rapid thermal annealing of the aluminum-copper metallurgy at a temperature of between about 400.degree. to 550.degree. C. is performed. The resulting surfaces are rinsed to remove any residual resist material. The result is a void-free aluminum-copper metallurgy surface.

REFERENCES:
patent: Re32207 (1986-07-01), Levinstein et al.
patent: 4618878 (1986-10-01), Aoyama et al.

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