Rapid thermal processing apparatus and methods

Details Rapid thermal processing apparatus and methods Rapid thermal processing apparatus and methods

2004-06-16

2009-11-17

Chen, Kin-Chan (Department: 1792)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

C438S014000

Reexamination Certificate

active

07618830

ABSTRACT:
Rapid thermal processing apparatus methods are disclosed. In a disclosed apparatus, rapid thermal processing is carried out when the residual oxygen detected by a residual oxygen detector does not exceed a predetermined tolerance level. Accordingly, it is possible to prevent the contact resistance of the wafers from increasing due to the presence of excessive oxygen.

REFERENCES:
patent: 5433785 (1995-07-01), Saito
patent: 5960319 (1999-09-01), Iwata et al.
patent: 6271549 (2001-08-01), Hamanaka
patent: 6501191 (2002-12-01), Tanaka et al.
patent: 6544890 (2003-04-01), Hamanaka
patent: 6624095 (2003-09-01), Yamamoto
patent: 7179729 (2007-02-01), Dairiki et al.
patent: 03-089517 (1991-04-01), None
patent: 04-280625 (1992-10-01), None
patent: 11-204456 (1999-07-01), None
patent: 1020020041291 (2002-06-01), None

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