Rapid thermal nitridized oxide locos process

Details Rapid thermal nitridized oxide locos process Rapid thermal nitridized oxide locos process

1987-04-13

1988-08-16

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156657, 1566591, 156662, 252 791, 357 49, 437 61, 437228, H01L 2100, B44C 122, C03C 1500, C03C 2506

Patent

active

047642483

ABSTRACT:
A process for minimizing bird's beak in local oxidation of silicon which is compatible with high density (VLSI) semiconductor devices is disclosed. A pad oxide is nitridized using rapid thermal nitridization, which works quickly with minimal thermal cycling of the wafer. A silicon nitride film is then deposited over the nitridized oxide. Both films are exposed to dry plasma etching which gives more consistent results than wet methods. The field oxide is then grown and finally the masking films of the nitridized oxide and silicon nitride are removed, whereby field oxides are grown with minimal bird's beak, and minimal damage to the wafer with a small number of steps. The pad oxide may be grown in the same rapid thermal annealer used for the rapid thermal nitridization. Both cycles (pad oxide growth and nitridization of the pad oxide) can be integrated to "one" cycle and performed sequentially in the same rapid thermal annealer to increase throughput and improve device quality.

REFERENCES:
patent: 4455193 (1984-06-01), Jeuch et al.
patent: 4622096 (1986-11-01), Dil et al.

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