Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-09-19
1999-09-07
Booth, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438161, 438447, H01L 2100, H01L 2176
Patent
active
059500786
ABSTRACT:
A method for rapid thermally annealing a thin amorphous film on a transparent substrate with the use of a radiation absorption film is provided. Unlike a transmissive silicon thin film, or transparent substrate, the metal absorptive film has excellent radiation absorption characteristics. When a radiation absorption layer is added to the substrate it is possible to rapidly anneal an amorphous silicon film with convention IC process radiation lamps. The metal absorption film also acts to conduct the heat to the amorphous silicon. The control provided by the choice of metal material, metal thickness, the oxidation of the metal surface, and the heat and duration of the RTA process provide unique opportunities to control the crystallization process. Polysilicon made by the above-described method has the potential of high electron mobility and low production costs. A thin-film structure for use in a TFT, made through the above-described method, is also provided.
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Article entitled, "Reflectivity Reduction by Oxygen Plasma Treatment of Capped Metallization Layer" authored by J.-S. Maa, D. Meyerhofer, J.J. O'Neill, Jr., L. White, and P.J. Zanzucchi, published in the J. Vac. Sci. Technol., B7(2), Mar./Apr. 1989, pp. 145-149.
Maa Jer-shen
Maekawa Masashi
Booth Richard
Lebentritt Michael S.
Maliszewski Gerald
Ripma David C.
Sharp Kabushiki Kaisha
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