Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-06-26
1999-04-06
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438668, 438672, 20419217, H01L 21283
Patent
active
058918035
ABSTRACT:
The present invention describes a method for forming interconnections in semiconductor device fabrication. A via (or trench) is formed on a semiconductor substrate. A metal layer is deposited over the semiconductor substrate using directional sputtering techniques. The metal layer is deposited such that the resulting metal layer has a large surface area and a high degree of curvature. The metal layer is then reflowed. During reflow, the high degree of curvature of the metal layer improves the migration of the metal layer. Thus the metal layer is distributed in a manner that rapidly and more evenly fills the via thereby forming a reliable interconnection.
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Intel Corporation
Nguyen Ha Tran
Niebling John F.
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