Rapid LPE crystal growth

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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C30B 1902

Patent

active

045978239

ABSTRACT:
An apparatus and a method for growth of material on substrates. A substrate at temperature T.sub.2 is placed with a surface in contact with solution in streamline flow through a narrow channel. The solution enters the channel with a temperature, T.sub.1, which is above its saturation temperature, T.sub.s, T.sub.2 is below T.sub.s, so material will deposit on the substrate surface. The flow of solution is maintained high enough to avoid the onset of constitutional supercooling.

REFERENCES:
patent: Re28140 (1974-08-01), Bergh et al.
patent: 3249404 (1966-05-01), Bennett
patent: 3880680 (1975-04-01), Weyrich et al.
patent: 3889635 (1975-06-01), Aengenheister
patent: 3990392 (1976-11-01), Andre
patent: 4052252 (1977-10-01), Lockwood
patent: 4315796 (1982-02-01), Nishizawa
patent: 4319953 (1982-03-01), Grabmaier
patent: 4357200 (1982-11-01), Grabmaier

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