Rapid etching method for silicon by SF.sub.6 gas

Details Rapid etching method for silicon by SF.sub.6 gas Rapid etching method for silicon by SF.sub.6 gas

1982-03-19

1986-10-14

Terapane, John F.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156662, B44C 122, C03C 1500, C03C 2000, C23F 100, H01L 21306

Patent

active

046170863

ABSTRACT:
A method of etching silicon with a laser at a very fast rate of the order of 45 microns/second includes the steps of providing an atmosphere of sulfur hexafluoride about the silicon and directing a continuous laser beam having a wavelength of about 0.6 or less microns at said silicon.

REFERENCES:
patent: 3364087 (1968-01-01), Solomon et al.
patent: 3886398 (1975-02-01), Vernon, Jr. et al.
Tiee et al., "Argon Fluoride (ARF) Laser Photodissociation . . . ", Chem. Abstracts, 94: 55814q (1981).
"Infrared Laser Induced Reaction of SF.sub.6 with Silicon Surfaces", by T. J. Chuang, J. Chem. Phys. 72(11), Jun. 1, 1980, pp. 6303, 6304.
"Laser Chemical Technique for Rapid Direct Writing of Surface Relief in Silicon", by D. J. Ehrlich et al, Appl. Phys. Lett. 38(12), Jun. 15, 1981, pp. 1018-1020.

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