Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-11-29
2009-08-11
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S405000, C257SE29301, C257SE29309, C365S185180, C365S185280
Reexamination Certificate
active
07573094
ABSTRACT:
Random number generating element comprises source region, drain region, semiconductor channel provided between source region and drain region and having portion of width W and length L, width W and length L satisfying W≦(π/10(μm2))/L, tunnel insulation film provided on semiconductor channel, and conductive fine particle group containing conductive fine particles provided on tunnel insulation film with surface density not less than 2.5×1011cm−2, charge and discharge of electrons generating between conductive fine particles and semiconductor channel via tunnel insulation film, wherein following inequalities are satisfied:in-line-formulae description="In-line Formulae" end="lead"?LWDdot≧[RTunnel/RTunnel(Tox=0.8 nm)]0.3 nm/T×exp[0.3 nm×(0.8 nm/T)×(4π(2m×3.1 eV)1/2/h)],in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?(q/4π∈T)≦26meV,in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?[Ddot×d4/3/(W×L1/2)]×[RTunnel/RTunnel(Tox=0.8 nm)]−2/3≧8000×21/2(μm−13/6)in-line-formulae description="In-line Formulae" end="tail"?where Ddotrepresents surface density, d average diameter, T thickness, Rtunneltunnel resistance per unit area, Rtunnel(Tox=0.8 nm) tunnel resistance, per unit area, of tunnel oxide film with thickness of 0.8 nm, h Plank's constant, q elemental charge, m effective mass, and ∈ dielectric constant.
REFERENCES:
patent: 2003/0162587 (2003-08-01), Tanamoto et al.
patent: 2005/0180219 (2005-08-01), Ohba et al.
patent: 03-108364 (2003-04-01), None
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patent: 03-258240 (2003-09-01), None
U.S. Appl. No. 11/743,265, filed May 2, 2007, Matsumoto, et al.
U.S. Appl. No. 12/130,567, filed May 30, 2008, Matsumoto, et al.
Fujita Shinobu
Ohba Ryuji
Erdem Fazli
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Purvis Sue
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