Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-02
2011-10-18
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000, C257SE29309, C708S255000
Reexamination Certificate
active
08039890
ABSTRACT:
A random number generating device includes a semiconductor device including a source region, a drain region, a channel region provided between the source region and the drain region, and an insulating portion provided on the channel region, the insulating portion including a trap insulating film having traps based on dangling bonds and expressed by Six(SiO2)y(Si3N4)1-yMz(M is an element other than Si, O, and N, x≧0, 1≧y≧0, z≧0, the case where x=0 and y=1 and z=0 is excluded), conductivity of the channel region varying randomly depending on the amount of charge caught in the traps, and a random number generating unit connected to the semiconductor device and generating random numbers based on a random variation in the conductivity of the channel region.
REFERENCES:
patent: 7405423 (2008-07-01), Tanamoto et al.
patent: 7558813 (2009-07-01), Tanamoto et al.
patent: 7573094 (2009-08-01), Ohba et al.
patent: 2005/0180219 (2005-08-01), Ohba et al.
patent: 2009/0309646 (2009-12-01), Kobayashi et al.
patent: 2009/0327379 (2009-12-01), Matsumoto et al.
patent: 2010/0057820 (2010-03-01), Matsumoto et al.
patent: 2005-167165 (2005-06-01), None
Matsumoto et al., Random Number Generator with 0.3MHz Generation Rate using Non-Stoichiometric SiN MOSFET, Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp. 280-281.
U.S. Appl. No 12/391,640, filed Feb. 24, 2009, Kobayashi, et al.
J. P. Xu, et al. “1/f Noise in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Under Different Hot-Carrier Stresses”, Journal of Applied Physics, vol. 86, No. 9, XP 012048937, Nov. 1, 1999, pp. 5203-5206.
U.S. Appl. No. 12/504,998, filed Jul. 17, 2009, Matsumoto, et al.
Shin-ichi Yasuda, et al., “Novel Random Number Generator Using MOS Gate After Soft-Breakdown”, Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 2002, pp. 250-251.
Takeshi Yoshida, et al., “Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides”, Jpn. J. Appl. Phys., vol. 34, part 2, No. 7B, Jul. 15, 1995, pp. L903-L906.
J. Robertson, “Defects and hydrogen in amorphous silicon nitride”, Philosophical Magazine B, vol. 69, No. 2, 1994, pp. 307-326.
S. Hasegawa, et al., “Bonding configuration and defects in amorphous SINx:H films”, Appl. Phys. Lett., vol. 58, No. 7, Feb. 18, 1991, pp. 741-743.
U.S. Appl. No. 12/130,567, filed May 30, 2008, Matsumoto, et al.
Fujita Shinobu
Matsumoto Mari
Ohba Ryuji
Kabushiki Kaisha Toshiba
Lulis Michael
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Phung Anh
LandOfFree
Random number generating device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Random number generating device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Random number generating device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4288007