Static information storage and retrieval – Read/write circuit – Including specified plural element logic arrangement
Reexamination Certificate
2007-03-20
2007-03-20
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including specified plural element logic arrangement
C365S154000, C365S156000, C365S189011
Reexamination Certificate
active
10985453
ABSTRACT:
A random access memory includes a memory cell having an access device. The access device is switched on or off in accordance with a signal on a wordline to conduct a memory operation through the access device. A logic circuit is coupled to the wordline to delay or gate the wordline signal until an enable signal has arrived at the logic circuit. The access device improves stability and eliminates early read problems.
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Keusey, Tutunjian & & Bitetto, P.C.
Perez-Pineiro Rafeal
Phung Anh
Wendler Eric J.
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