Random access memory with reduced access time in reading operati

Details Random access memory with reduced access time in reading operati Random access memory with reduced access time in reading operati

1989-06-27

1991-01-08

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Differential sensing

365149, 307530, G11C 1134

Patent

active

049842064

ABSTRACT:
A dynamic random access memory comprises a pair of write-in data transferring lines (IL, IL), a pair of read-out data transferring lines (OL, OL) and a current-mirror type sense amplifier comprising (30) CMOS transistors. The current-mirror type amplifier (30) is connected between a plurality of bit line pairs (BL, BL) and the pair of read-out data transferring lines (OL, OL). At the time of data reading, the pair of write-in data transferring lines (IL, IL) is connected to the corresponding bit line pair (BL, BL) in response to a write-in column decoded signal (YW) obtained by ANDing a column decoded signal (CA) with a write-in instruction signal (W).

REFERENCES:
patent: 4653029 (1987-03-01), Sato
patent: 4697112 (1987-09-01), Ohtani et al.

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