Random access memory using semiconductor data storage elements

Details Random access memory using semiconductor data storage elements Random access memory using semiconductor data storage elements

1986-03-11

1988-04-19

Moffitt, James W.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365203, G11C 700

Patent

active

047394994

ABSTRACT:
A CMOS random access memory has storage elements (1, 2 and 3) which produce complementary outputs on a pair of output conductors (7, 8). In order to speed up the establishment of the output voltages on the conductors two cross-connected transistors (22, 23) are provided to supplement the discharging of that conductor which is to have the lower voltage, each transistor being responsive to the voltage on one conductor to discharge the other conductor. The correct timing of the operation of the cross-connected transistors is provided by two further transistors (26, 27) having their gates respectively connected to the conductors which are arranged to become conducting when an adequate voltage charge has been achieved by the storage element. When either of the further transistors conducts a transistor (24) in series with the two cross-connected transistors is turned on to enable them to operate.

REFERENCES:
patent: 4412143 (1983-10-01), Patella et al.
patent: 4627033 (1986-12-01), Hyslop et al.

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