Random access memory having voltage provided out of boosted...

Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit

Reexamination Certificate

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C365S189090, C365S104000

Reexamination Certificate

active

11153969

ABSTRACT:
A random access memory including an array of single transistor memory cells and a voltage source. The voltage source is configured to receive a boosted supply voltage and a reference voltage. The voltage source is configured to provide an output voltage out of the boosted supply voltage and based on the reference voltage.

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