Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2007-03-27
2007-03-27
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C365S189090, C365S104000
Reexamination Certificate
active
11153969
ABSTRACT:
A random access memory including an array of single transistor memory cells and a voltage source. The voltage source is configured to receive a boosted supply voltage and a reference voltage. The voltage source is configured to provide an output voltage out of the boosted supply voltage and based on the reference voltage.
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Dicke Billig & Czaja, PLLC
Infineon Technologies North America Corp.
Nguyen Dang
Phung Anh
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