Random access memory employing complementary transistor switch (

Details Random access memory employing complementary transistor switch ( Random access memory employing complementary transistor switch (

1986-04-30

1988-06-21

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

For complementary information

365189, 365230, G11C 700

Patent

active

047529130

ABSTRACT:
Disclosed is an improved bit selection circuit for a RAM, in particular one employing CTS (complementary transistor switch) cells. The bit select circuitry includes interconnected first and second level matrix decoders, each memory column has a pair of bit lines, each pair of bit lines has connected thereto a bit select circuit, each of the bit select circuits being connected to an output of the second level decoder, a bit up-level clamp circuit connected to each of the bit select circuits of each pair of bit lines, each of the bit select circuits including a first circuit for increasing the speed of selection of the selected pair of lines, the bit up-level clamp circuit cooperating with the bit select circuit of the selected pair of bit lines for positively limiting the upper potential level of the selected pair of bit lines, and each of the bit select circuits including a second circuit for increasing the speed of deselection of the selected pair of bit lines.

REFERENCES:
patent: 4191899 (1980-03-01), Tomczak et al.
patent: 4330853 (1982-05-01), Heimeier
patent: 4578779 (1986-03-01), Chan et al.
patent: 4596002 (1986-06-01), Chan et al.
patent: 4598390 (1986-07-01), Chan
Chan et al., "SCR Pull Up Circuit", IBM Technical Disclosure Bulletin, vol. 26, No. 10A, Mar. 1984, pp. 5036-5038.

Affiliated with

Also associated with

Rating

Random access memory employing complementary transistor switch ( does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Random access memory employing complementary transistor switch (, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Random access memory employing complementary transistor switch ( will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-933672