Random access memory device utilizing a vertically oriented...

Details Random access memory device utilizing a vertically oriented... Random access memory device utilizing a vertically oriented...

2007-04-17

2007-04-17

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000

Reexamination Certificate

active

10637557

ABSTRACT:
A memory structure has a vertically oriented access transistor with an annular gate region. A transistor is fabricated such that the channel of the transistor extends outward with respect to the surface of the substrate. An annular gate is fabricated around the vertical channel such that it partially or completely surrounds the channel. A buried annular bitline may also be implemented. After the vertically oriented transistor is fabricated with the annular gate, a storage device may be fabricated over the transistor to provide a memory cell.

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