Random access memory device having high-speed sense amplifier ci

Details Random access memory device having high-speed sense amplifier ci Random access memory device having high-speed sense amplifier ci

1991-09-30

1994-01-25

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Differential sensing

365207, 307530, G11C 1300

Patent

active

052821684

ABSTRACT:
A random access memory device memorizes data bits in memory cells each implemented by field effect transistors arranged in a flip-flop configuration, and one of the data bits are read out to a pair of data signal lines in the form of a small difference in voltage level for increasing the magnitude of the small difference by means of a high-speed sense amplifier unit, wherein the small difference is stepped down through a pair of diode elements so that a pre-amplifying circuit implemented by bipolar transistors firstly increases the small difference with voltage levels at the anodes and cathodes of the diode elements, then the differential amplifying circuit implemented by bipolar transistors starts on increasing a differential voltage level at the output nodes of the pre-amplifying circuit so that the differential amplification is completed within a relatively short time period.

REFERENCES:
patent: 4553053 (1985-11-01), Ong et al.
patent: 4607172 (1986-08-01), Frederiksen et al.
patent: 4991141 (1991-02-01), Tran

Affiliated with

Also associated with

Rating

Random access memory device having high-speed sense amplifier ci does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Random access memory device having high-speed sense amplifier ci, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Random access memory device having high-speed sense amplifier ci will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-733129