Random access memory cell with ion implanted resistor element

Details Random access memory cell with ion implanted resistor element Random access memory cell with ion implanted resistor element

1976-06-29

1978-01-24

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

Data refresh

307238, 365148, 365177, 365178, G11C 1140

Patent

active

040706532

ABSTRACT:
A self-refresh MOS RAM cell uses a resistor element made by an ion implant step compatable with a self-aligned N-channel silicon-gate process. The resistor element is beneath the field oxide in the finished device, although the implant step is prior to formation of the thick oxide. The cell employs two transistors and a gated capacitor, connected in a manner such that a stored "1" switches the implanted resistor to a high impedance state, while a stored "0" maintains the resistor in a relatively low resistance state.

REFERENCES:
patent: 3693170 (1972-09-01), Ellis et al.
patent: 3706891 (1972-12-01), Donofrio et al.
patent: 3876993 (1975-04-01), Cavanaugh
patent: 3955181 (1976-05-01), Raymond, Jr.
P. Pleshko, "Low-Power Flip-Flop," Oct. 1966, pp. 553-554, IBM Technical Disclosure Bulletin, vol. 9, No. 5.

Affiliated with

Also associated with

Rating

Random access memory cell with ion implanted resistor element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Random access memory cell with ion implanted resistor element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Random access memory cell with ion implanted resistor element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-490658