Random access memory cell resistant to radiation induced upsets

Details Random access memory cell resistant to radiation induced upsets Random access memory cell resistant to radiation induced upsets

1996-01-16

1997-05-20

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Flip-flop

365154, 365190, 257903, 257904, G11C 11412

Patent

active

056318634

ABSTRACT:
A radiation resistant random access memory cell which has a coupling circuit between a storage node of a first CMOS pair and a gate node of a second CMOS pair. The coupling circuit is controlled by a word line and provides a first resistive element between the storage node and the body of the coupling circuit and a second resistive element between the gate node and the body of the coupling circuit.

REFERENCES:
patent: 4725981 (1988-02-01), Rutledge
patent: 4797804 (1989-01-01), Rockett, Jr.
patent: 4956814 (1990-09-01), Houston
patent: 5301146 (1994-04-01), Hama

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